Recombination-generation (R-G) of carriers in silicon: The minority-carrier recombination lifetime is the average amount of time that it takes for a minority carrier to recombine with a majority carrier. O In Si, majority carriers fill trap states that are located energetically near to the middle of the energy band gap.
. 276 Downloads. Abstract Armchair graphene nanoribbons (A-GNRs), with a tunable energy gap, are an alternative structure for use in optoelectronic devices. The performance of these optoelectronic devices critically depends on the carrier generation and recombination rates, which have been calculated in this paper.
Because of the 1D band structure of A-GNRs, carrier scattering, generation and recombination rates in these structures would be completely different from those in 2D graphene sheets. In this paper, using the tight binding model, and by considering the edge deformation and Fermi golden rule, we find the band structure, and the carrier generation and recombination rates for pure A-GNR due to optical and acoustic phonons, as well as Line Edge Roughness (LER) scatterings. The obtained results show that the total generation and recombination rates increase with increasing A-GNR width and eventually saturate for wide ribbons. These rates increase as the carrier concentration is increased (which has been considered homogenous along ribbon width) and temperature. Also, despite the large LER scattering in narrow ribbons, the generation and recombination rates are less for A-GNRs than for graphene sheets. Using this theoretical model, one can find the suitable A-GNR structure for the design of optoelectronic devices.
We use flash-photolysis time-resolved microwave conductivity experiments ( FP-TRMC) and femtosecond–nanosecond pump–probe transient absorption spectroscopy to investigate photoinduced carrier generation and recombination dynamics of a trilayer cascade heterojunction composed of poly(3-hexylthiophene) (P3HT), titanyl phthalocyanine (TiOPc), and fullerene (C 60). Carrier generation following selective photoexcitation of TiOPc is independently observed at both the P3HT/TiOPc and TiOPc/C 60 interfaces.
The transient absorption results indicate that following initial charge generation processes to produce P3HT.+/TiOPc.– and TiOPc.+/C 60.– at each interface from (P3HT/TiOPc./C 60), the final charge-separated product of (P3HT.+/TiOPc/C 60.–) is responsible for the long-lived photoconductance signals in FP-TRMC. At the P3HT/TiOPc interface in both P3HT/TiOPc and P3HT/TiOPc/C 60 samples, the electron transfer appears to occur only with the crystalline (weakly coupled H-aggregate) phase of the P3HT. Ca' Foscari University of Venice. Cagliari State University. Free University of Bolzano.
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